FQP3N60C

Teknik Özellikler

Turn On Delay Time

12 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

600V

Direnç

3.4Ohm

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Vgsth Max Id

4V @ 250μA

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

Power Dissipation

75W

Qualification Status

Not Qualified

Fabrika Tedarik Süresi

6 Weeks

Transistor Application

SWITCHING

Rise Time

30ns

Vgs Max

±30V

Parça Durumu

Active

Fall Time Typ

35 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Element Configuration

Single

Yayın Yılı

2013

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Turn Off Delay Time

35 ns

Tepe Reflow Sıcaklığı (°C)

260

Jesd30 Code

R-PSFM-T3

Current Continuous Drain Id25

3A Tc

Ambalaj

Tube

Seri

QFET®

Kurşunsuz

Lead Free

Rds On Max Id Vgs

3.4 Ω @ 1.5A, 10V

Transistor Element Material

SILICON

Continuous Drain Current Id

3A

Drain Currentmax Abs Id

3A

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)