FQP33N10

Teknik Özellikler

Rise Time

195ns

Weight

1.8g

Transistor Application

SWITCHING

Power Dissipation

127W

ECCN Kodu

EAR99

Terminal Sayısı

3

Direnç

52mOhm

Vgsth Max Id

4V @ 250μA

Pin Sayısı

3

Current Continuous Drain Id25

33A Tc

Ambalaj

Tube

Turn Off Delay Time

80 ns

Number Of Elements

1

Threshold Voltage

4V

Vgs Max

±25V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Continuous Drain Current Id

33A

Rds On Max Id Vgs

52m Ω @ 16.5A, 10V

Input Capacitance Ciss Max Vds

1500pF @ 25V

Power Dissipation Max

127W Tc

Voltage Rated Dc

100V

Gate Charge Qg Max Vgs

51nC @ 10V

Uzunluk

10.67mm

Fabrika Tedarik Süresi

5 Weeks

Drain To Source Breakdown Voltage

100V

Dual Supply Voltage

100V

Turn On Delay Time

15 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Genişlik

4.83mm

Seri

QFET®

Element Configuration

Single

Yayın Yılı

2013

Radyasyon Dayanımı

No

Akım Değeri

33A

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant