FQP2P40-F080

Teknik Özellikler

Input Capacitance Ciss Max Vds

350pF @ 25V

Kılıf / Paket

TO-220-3

Power Dissipation Max

63W Tc

Fet Type

P-Channel

Gate Charge Qg Max Vgs

13nC @ 10V

Gate To Source Voltage Vgs

30V

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Continuous Drain Current Id

2A

Drain Currentmax Abs Id

2A

Pulsed Drain Currentmax Idm

8A

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

400V

Rds On Max Id Vgs

6.5 Ω @ 1A, 10V

Current Continuous Drain Id25

2A Tc

Seri

QFET®

Ambalaj

Tube

Turn Off Delay Time

55 ns

Number Of Channels

1

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Element Configuration

Single

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Vgs Max

±30V

Parça Durumu

Active

Fall Time Typ

60 ns

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

JESD-609 Kodu

e3

Rise Time

75ns

Weight

1.8g

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

7 Weeks

Drain To Source Breakdown Voltage

-400V

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3