FQP2N40-F080

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Element Configuration

Single

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Parça Durumu

Active

Fall Time Typ

25 ns

Contact Plating

Tin

Ds Breakdown Voltagemin

400V

Vgs Max

±30V

Ambalaj

Tube

Seri

QFET®

Current Continuous Drain Id25

1.8A Tc

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Turn Off Delay Time

7 ns

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3

Pin Sayısı

3

Montaj

Through Hole

Turn On Delay Time

7 ns

Drive Voltage Max Rds On Min Rds On

10V

Rise Time

30ns

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

8 Weeks

Weight

1.8g

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Gate Charge Qg Max Vgs

5.5nC @ 10V

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Kılıf / Paket

TO-220-3

Input Capacitance Ciss Max Vds

150pF @ 25V

Power Dissipation Max

40W Ta

Pulsed Drain Currentmax Idm

7.2A

Transistor Element Material

SILICON

Rds On Max Id Vgs

5.8 Ω @ 900mA, 10V

Drain To Source Voltage Vdss

400V

Kurşunsuz Kodu

yes

Avalanche Energy Rating Eas

85 mJ

Nem Hassasiyeti (MSL)

1 (Unlimited)