Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- RoHS Durumu
- ROHS3 Compliant
- Jedec95 Code
- TO-220AB
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 1 week ago)
- Parça Durumu
- Active
- Fall Time Typ
- 25 ns
- Contact Plating
- Tin
- Ds Breakdown Voltagemin
- 400V
- Vgs Max
- ±30V
- Ambalaj
- Tube
- Seri
- QFET®
- Current Continuous Drain Id25
- 1.8A Tc
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Number Of Elements
- 1
- Turn Off Delay Time
- 7 ns
- Vgsth Max Id
- 5V @ 250μA
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Turn On Delay Time
- 7 ns
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rise Time
- 30ns
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 8 Weeks
- Weight
- 1.8g
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Gate Charge Qg Max Vgs
- 5.5nC @ 10V
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Kılıf / Paket
- TO-220-3
- Input Capacitance Ciss Max Vds
- 150pF @ 25V
- Power Dissipation Max
- 40W Ta
- Pulsed Drain Currentmax Idm
- 7.2A
- Transistor Element Material
- SILICON
- Rds On Max Id Vgs
- 5.8 Ω @ 900mA, 10V
- Drain To Source Voltage Vdss
- 400V
- Kurşunsuz Kodu
- yes
- Avalanche Energy Rating Eas
- 85 mJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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