FQP27N25

Teknik Özellikler

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

600 mJ

Continuous Drain Current Id

25.5A

Rds On Max Id Vgs

110m Ω @ 12.75A, 10V

Input Capacitance Ciss Max Vds

2450pF @ 25V

Voltage Rated Dc

250V

Power Dissipation Max

180W Tc

Gate Charge Qg Max Vgs

65nC @ 10V

Rise Time

270ns

Weight

1.8g

Transistor Application

SWITCHING

Power Dissipation

180W

Terminal Sayısı

3

Vgsth Max Id

5V @ 250μA

ECCN Kodu

EAR99

Pin Sayısı

3

Current Continuous Drain Id25

25.5A Tc

Ambalaj

Tube

Number Of Elements

1

Turn Off Delay Time

80 ns

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Vgs Max

±30V

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Nominal Vgs

5 V

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

30V

Fabrika Tedarik Süresi

8 Weeks

Uzunluk

10.1mm

Terminal Kaplaması

Tin (Sn)

Drain To Source Breakdown Voltage

250V

Drive Voltage Max Rds On Min Rds On

10V