FQP24N08

Teknik Özellikler

Terminal Sayısı

3

Terminal Kaplaması

Tin (Sn)

Vgsth Max Id

4V @ 250μA

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

80V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

10 ns

Montaj

Through Hole

Rise Time

105ns

Weight

1.8g

Transistor Application

SWITCHING

Fabrika Tedarik Süresi

5 Weeks

Power Dissipation

75W

Akım Değeri

24A

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Element Configuration

Single

Radyasyon Dayanımı

No

Parça Durumu

Active

Fall Time Typ

35 ns

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Vgs Max

±25V

Current Continuous Drain Id25

24A Tc

Seri

QFET®

Ambalaj

Tube

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Turn Off Delay Time

30 ns

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

96A

Rds On Max Id Vgs

60m Ω @ 12A, 10V

Kurşunsuz

Lead Free

Drainsource On Resistancemax

0.06Ohm

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

230 mJ