FQP20N06

Teknik Özellikler

Kılıf / Paket

TO-220-3

Gate To Source Voltage Vgs

25V

Reach Svhc

No SVHC

Fet Type

N-Channel

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Kurşunsuz Kodu

yes

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Genişlik

4.7mm

Seri

QFET®

Fall Time Typ

20 ns

Contact Plating

Tin

Parça Durumu

Active

Element Configuration

Single

Radyasyon Dayanımı

No

Yayın Yılı

2013

RoHS Durumu

ROHS3 Compliant

Jedec95 Code

TO-220AB

Akım Değeri

20A

Uzunluk

10.1mm

Fabrika Tedarik Süresi

5 Weeks

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

5 ns

Montaj

Through Hole

Drain To Source Breakdown Voltage

60V

Power Dissipation Max

53W Tc

Voltage Rated Dc

60V

Input Capacitance Ciss Max Vds

590pF @ 25V

Gate Charge Qg Max Vgs

15nC @ 10V

Continuous Drain Current Id

20A

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Rds On Max Id Vgs

60m Ω @ 10A, 10V

Pulsed Drain Currentmax Idm

80A

Turn Off Delay Time

20 ns

Number Of Elements

1

Current Continuous Drain Id25

20A Tc

Ambalaj

Tube