FQP17P10

Teknik Özellikler

Nominal Vgs

-4 V

Fet Type

P-Channel

Max Junction Temperature Tj

175°C

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

30V

Kılıf / Paket

TO-220-3

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

20.4mm

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Akım Değeri

-16.5A

Element Configuration

Single

Yayın Yılı

1999

Radyasyon Dayanımı

No

Contact Plating

Tin

Fall Time Typ

100 ns

Parça Durumu

Active

Seri

QFET®

Genişlik

4.7mm

Dual Supply Voltage

-100V

Drain To Source Breakdown Voltage

-100V

Turn On Delay Time

17 ns

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Fabrika Tedarik Süresi

9 Weeks

Uzunluk

10.1mm

Gate Charge Qg Max Vgs

39nC @ 10V

Input Capacitance Ciss Max Vds

1100pF @ 25V

Voltage Rated Dc

-100V

Power Dissipation Max

100W Tc

Lead Pitch

2.54mm

Pulsed Drain Currentmax Idm

66A

Rds On Max Id Vgs

190m Ω @ 8.25A, 10V

Drain To Source Voltage Vdss

100V

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE