FQP16N25

Teknik Özellikler

Yükseklik

16.3mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Uzunluk

10.67mm

Fabrika Tedarik Süresi

5 Weeks

Qualification Status

Not Qualified

Drain To Source Breakdown Voltage

250V

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Turn On Delay Time

17 ns

Drive Voltage Max Rds On Min Rds On

10V

Genişlik

4.7mm

Seri

QFET®

Yayın Yılı

2013

Element Configuration

Single

Akım Değeri

16A

Jedec95 Code

TO-220AB

RoHS Durumu

ROHS3 Compliant

Parça Durumu

Active

Fall Time Typ

75 ns

Avalanche Energy Rating Eas

560 mJ

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

16A

Pulsed Drain Currentmax Idm

64A

Rds On Max Id Vgs

230m Ω @ 8A, 10V

Input Capacitance Ciss Max Vds

1200pF @ 25V

Power Dissipation Max

142W Tc

Voltage Rated Dc

250V

Gate Charge Qg Max Vgs

35nC @ 10V

Rise Time

140ns

Power Dissipation

50W

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED