FQP13N50C

Teknik Özellikler

Avalanche Energy Rating Eas

860 mJ

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

13A

Terminal

Through Hole

Pulsed Drain Currentmax Idm

52A

Rds On Max Id Vgs

480m Ω @ 6.5A, 10V

Input Capacitance Ciss Max Vds

2055pF @ 25V

Power Dissipation Max

195W Tc

Voltage Rated Dc

500V

Gate Charge Qg Max Vgs

56nC @ 10V

Rise Time

100ns

Power Dissipation

195W

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

4.535924g

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 250μA

Direnç

480mOhm

Terminal Sayısı

3

Pin Sayısı

3

Ambalaj

Tube

Current Continuous Drain Id25

13A Tc

Number Of Elements

1

Turn Off Delay Time

130 ns

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgs Max

±30V

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Nominal Vgs

4 V

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Uzunluk

10.1mm

Drain To Source Breakdown Voltage

500V