FQP13N10L

Teknik Özellikler

Voltage Rated Dc

100V

Power Dissipation Max

65W Tc

Input Capacitance Ciss Max Vds

520pF @ 25V

Gate Charge Qg Max Vgs

12nC @ 5V

Continuous Drain Current Id

12.8A

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

95 mJ

Rds On Max Id Vgs

180m Ω @ 6.4A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Number Of Elements

1

Turn Off Delay Time

22 ns

Current Continuous Drain Id25

12.8A Tc

Ambalaj

Tube

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Vgs Max

±20V

Threshold Voltage

2V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Weight

1.8g

Power Dissipation

65W

Transistor Application

SWITCHING

Rise Time

220ns

Pin Sayısı

3

Additional Feature

FAST SWITCHING

Direnç

180mOhm

Terminal Sayısı

3

Vgsth Max Id

2V @ 250μA

ECCN Kodu

EAR99

Kılıf / Paket

TO-220-3

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Seri

QFET®