FQP13N10

Teknik Özellikler

Avalanche Energy Rating Eas

95 mJ

Çalışma Sıcaklığı

-55°C~175°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

12.8A

Rds On Max Id Vgs

180m Ω @ 6.4A, 10V

Input Capacitance Ciss Max Vds

450pF @ 25V

Power Dissipation Max

65W Tc

Voltage Rated Dc

100V

Gate Charge Qg Max Vgs

16nC @ 10V

Rise Time

55ns

Power Dissipation

65W

Transistor Application

SWITCHING

Weight

1.8g

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 250μA

Direnç

180mOhm

Terminal Sayısı

3

Pin Sayısı

3

Ambalaj

Tube

Current Continuous Drain Id25

12.8A Tc

Number Of Elements

1

Turn Off Delay Time

20 ns

Threshold Voltage

4V

Vgs Max

±25V

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

9.4mm

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Kılıf / Paket

TO-220-3

Fet Type

N-Channel

Gate To Source Voltage Vgs

25V

Reach Svhc

No SVHC

Uzunluk

10.1mm

Fabrika Tedarik Süresi

5 Weeks

Drain To Source Breakdown Voltage

100V

Montaj

Through Hole