FQP12P20

Teknik Özellikler

Gate Charge Qg Max Vgs

40nC @ 10V

Input Capacitance Ciss Max Vds

1200pF @ 25V

Power Dissipation Max

120W Tc

Voltage Rated Dc

-200V

Pulsed Drain Currentmax Idm

46A

Lead Pitch

2.54mm

Drain To Source Voltage Vdss

200V

Rds On Max Id Vgs

470m Ω @ 5.75A, 10V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

11.5A

Terminal

Through Hole

Threshold Voltage

-5V

Vgs Max

±30V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Ambalaj

Tube

Current Continuous Drain Id25

11.5A Tc

Turn Off Delay Time

40 ns

Number Of Elements

1

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Direnç

470MOhm

Terminal Sayısı

3

Pin Sayısı

3

Rise Time

195ns

Transistor Application

SWITCHING

Power Dissipation

120W

Weight

1.8g

Nominal Vgs

-5 V

Fet Type

P-Channel

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Kılıf / Paket

TO-220-3

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Yükseklik

9.4mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes