FQN1N60CTA

Teknik Özellikler

Rds On Max Id Vgs

11.5 Ω @ 150mA, 10V

Terminal Pozisyonu

BOTTOM

Continuous Drain Current Id

300mA

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

6.2nC @ 10V

Feedback Capmax Crss

6 pF

Power Dissipation Max

1W Ta 3W Tc

Input Capacitance Ciss Max Vds

170pF @ 25V

Pin Sayısı

3

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

3

Direnç

11.5Ohm

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Power Dissipation

1W

Weight

240mg

Rise Time

21ns

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Vgs Max

±30V

Threshold Voltage

4V

Number Of Elements

1

Turn Off Delay Time

13 ns

Ambalaj

Tape & Box (TB)

Current Continuous Drain Id25

300mA Tc

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Yükseklik

5.33mm

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

30V

Fet Type

N-Channel

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

7 ns

Terminal Kaplaması

Tin (Sn)