Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Element Configuration
- Single
- Radyasyon Dayanımı
- No
- Akım Değeri
- 40A
- RoHS Durumu
- ROHS3 Compliant
- Vgs Max
- ±30V
- Parça Durumu
- Active
- Fall Time Typ
- 250 ns
- Lifecycle Status
- ACTIVE (Last Updated: 2 days ago)
- JESD-609 Kodu
- e3
- Genişlik
- 5mm
- Current Continuous Drain Id25
- 40A Tc
- Ambalaj
- Tube
- Seri
- QFET®
- Number Of Elements
- 1
- Turn Off Delay Time
- 350 ns
- ECCN Kodu
- EAR99
- Drain To Source Breakdown Voltage
- 500V
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Tin (Sn)
- Vgsth Max Id
- 5V @ 250μA
- Drive Voltage Max Rds On Min Rds On
- 10V
- Turn On Delay Time
- 140 ns
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Rise Time
- 440ns
- Case Connection
- ISOLATED
- Uzunluk
- 20mm
- Weight
- 6.756g
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 15 Weeks
- Power Dissipation
- 460W
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 200nC @ 10V
- Gate To Source Voltage Vgs
- 30V
- Input Capacitance Ciss Max Vds
- 7500pF @ 25V
- Kılıf / Paket
- TO-264-3, TO-264AA
- Power Dissipation Max
- 460W Tc
- Voltage Rated Dc
- 500V
- Transistor Element Material
- SILICON
- Kurşunsuz
- Lead Free
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