FQI7N60TU

Teknik Özellikler

Transistor Element Material

SILICON

Drainsource On Resistancemax

1Ohm

Kurşunsuz

Lead Free

Montaj Tipi

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz Kodu

yes

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain To Source Breakdown Voltage

600V

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

30 ns

Fabrika Tedarik Süresi

5 Weeks

Qualification Status

Not Qualified

Yayın Yılı

2014

Element Configuration

Single

RoHS Durumu

ROHS3 Compliant

Akım Değeri

7.4A

Fall Time Typ

60 ns

Parça Durumu

Active

Jesd30 Code

R-PSIP-T3

Seri

QFET®

Pulsed Drain Currentmax Idm

29.6A

Rds On Max Id Vgs

1 Ω @ 3.7A, 10V

Avalanche Energy Rating Eas

580 mJ

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

7.4A

Gate Charge Qg Max Vgs

38nC @ 10V

Input Capacitance Ciss Max Vds

1430pF @ 25V

Power Dissipation Max

3.13W Ta 142W Tc

Voltage Rated Dc

600V

ECCN Kodu

EAR99

Vgsth Max Id

5V @ 250μA

Terminal Sayısı

3

Rise Time

80ns

Transistor Application

SWITCHING

Power Dissipation

3.13W