FQI5N60CTU

Teknik Özellikler

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

4.5A

Transistor Element Material

SILICON

Rds On Max Id Vgs

2.5 Ω @ 2.25A, 10V

Kurşunsuz

Lead Free

Kılıf / Paket

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance Ciss Max Vds

670pF @ 25V

Voltage Rated Dc

600V

Power Dissipation Max

3.13W Ta 100W Tc

Fet Type

N-Channel

Gate Charge Qg Max Vgs

19nC @ 10V

Gate To Source Voltage Vgs

30V

Rise Time

42ns

Weight

2.084g

Power Dissipation

3.13W

Fabrika Tedarik Süresi

4 Weeks

Transistor Application

SWITCHING

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3

Additional Feature

FAST SWITCHING

Vgsth Max Id

4V @ 250μA

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

600V

Drive Voltage Max Rds On Min Rds On

10V

Turn On Delay Time

10 ns

Montaj

Through Hole

Current Continuous Drain Id25

4.5A Tc

Ambalaj

Tube

Seri

QFET®

Jesd30 Code

R-PSIP-T3

Number Of Elements

1

Turn Off Delay Time

38 ns

RoHS Durumu

ROHS3 Compliant

Akım Değeri

5A

Element Configuration

Single

Yayın Yılı

2013