FQD8P10TM

Teknik Özellikler

Gate Charge Qg Max Vgs

15nC @ 10V

Power Dissipation Max

2.5W Ta 44W Tc

Voltage Rated Dc

-100V

Input Capacitance Ciss Max Vds

470pF @ 25V

Drain To Source Voltage Vdss

100V

Rds On Max Id Vgs

530m Ω @ 3.3A, 10V

Pulsed Drain Currentmax Idm

26.4A

Continuous Drain Current Id

6.6A

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Threshold Voltage

-4V

Number Of Elements

1

Turn Off Delay Time

20 ns

Current Continuous Drain Id25

6.6A Tc

Ambalaj

Tape & Reel (TR)

Pin Sayısı

3

ECCN Kodu

EAR99

Terminal Sayısı

2

Direnç

530mOhm

Vgsth Max Id

4V @ 250μA

Weight

260.37mg

Power Dissipation

2.5W

Transistor Application

SWITCHING

Rise Time

110ns

Case Connection

DRAIN

Gate To Source Voltage Vgs

30V

Reach Svhc

No SVHC

Fet Type

P-Channel

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Yükseklik

2.3mm

Kurşunsuz Kodu

yes

Terminal Formu

GULL WING

Fall Time Typ

35 ns