FQD7P06TM

Teknik Özellikler

Drain To Source Voltage Vdss

60V

Rds On Max Id Vgs

451m Ω @ 2.7A, 10V

Avalanche Energy Rating Eas

90 mJ

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Continuous Drain Current Id

5.4A

Gate Charge Qg Max Vgs

8.2nC @ 10V

Input Capacitance Ciss Max Vds

295pF @ 25V

Power Dissipation Max

2.5W Ta 28W Tc

Voltage Rated Dc

-60V

ECCN Kodu

EAR99

Vgsth Max Id

4V @ 250μA

Terminal Sayısı

2

Direnç

450mOhm

Pin Sayısı

3

Rise Time

50ns

Case Connection

DRAIN

Power Dissipation

2.5W

Transistor Application

SWITCHING

Weight

260.37mg

Vgs Max

±25V

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

JESD-609 Kodu

e3

Ambalaj

Tape & Reel (TR)

Current Continuous Drain Id25

5.4A Tc

Number Of Elements

1

Turn Off Delay Time

7.5 ns

Transistor Element Material

SILICON

Kurşunsuz

Lead Free

Yükseklik

2.39mm

Montaj Tipi

Surface Mount

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Formu

GULL WING

Kurşunsuz Kodu

yes

Fet Type

P-Channel

Gate To Source Voltage Vgs

25V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain To Source Breakdown Voltage

-60V

Terminal Kaplaması

Tin (Sn)

Montaj

Surface Mount