FQD7N10LTM

Teknik Özellikler

Jesd30 Code

R-PSSO-G2

Genişlik

6.1mm

Seri

QFET®

Fall Time Typ

50 ns

Contact Plating

Tin

Parça Durumu

Active

Element Configuration

Single

Radyasyon Dayanımı

No

Yayın Yılı

2000

RoHS Durumu

ROHS3 Compliant

Akım Değeri

5.8A

Uzunluk

6.6mm

Fabrika Tedarik Süresi

4 Weeks

Drive Voltage Max Rds On Min Rds On

5V 10V

Turn On Delay Time

9 ns

Montaj

Surface Mount

Drain To Source Breakdown Voltage

100V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate To Source Voltage Vgs

20V

Reach Svhc

No SVHC

Fet Type

N-Channel

Yükseklik

2.3mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Kurşunsuz Kodu

yes

Terminal Formu

GULL WING

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Number Of Elements

1

Turn Off Delay Time

17 ns

Current Continuous Drain Id25

5.8A Tc

Ambalaj

Tape & Reel (TR)

Vgs Max

±20V

JESD-609 Kodu

e3

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Threshold Voltage

2V

Weight

260.37mg

Transistor Application

SWITCHING

Power Dissipation

2.5W

Rise Time

100ns