FQD4P25TM-WS

Teknik Özellikler

Fall Time Typ

27 ns

Pin Sayısı

3

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Turn Off Delay Time

14 ns

Rds On Max Id Vgs

2.1 Ω @ 1.55A, 10V

Jesd30 Code

R-PSSO-G2

Gate To Source Voltage Vgs

30V

Avalanche Energy Rating Eas

280 mJ

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

3.1A Tc

Input Capacitance Ciss Max Vds

420pF @ 25V

Case Connection

DRAIN

Turn On Delay Time

9.5 ns

Direnç

2.1Ohm

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

14nC @ 10V

Continuous Drain Current Id

3.1A

Parça Durumu

Active

Fabrika Tedarik Süresi

7 Weeks

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

5V @ 250μA

Rise Time

60ns

Fet Type

P-Channel

Drain To Source Breakdown Voltage

-250V

Power Dissipation Max

2.5W Ta 45W Tc

Power Dissipation

45W

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj Tipi

Surface Mount