FQD4N25TM-WS

Teknik Özellikler

Radyasyon Dayanımı

No

Terminal Formu

GULL WING

Fall Time Typ

22 ns

Jesd30 Code

R-PSSO-G2

Gate To Source Voltage Vgs

30V

Avalanche Energy Rating Eas

52 mJ

Rds On Max Id Vgs

1.75 Ω @ 1.5A, 10V

Turn Off Delay Time

6.4 ns

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Direnç

1.75Ohm

Drain Currentmax Abs Id

3A

Turn On Delay Time

6.8 ns

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

200pF @ 25V

Kurşunsuz Kodu

yes

Current Continuous Drain Id25

3A Tc

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

3A

Gate Charge Qg Max Vgs

5.6nC @ 10V

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Jedec95 Code

TO-252AA

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

RoHS Durumu

ROHS3 Compliant

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Kurşunsuz

Lead Free

Power Dissipation

2.5W

Power Dissipation Max

2.5W Ta 37W Tc

Drain To Source Breakdown Voltage

250V

Fet Type

N-Channel

Rise Time

45ns

Vgsth Max Id

5V @ 250μA

Vgs Max

±30V