FQD2N60CTM-WS

Teknik Özellikler

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge Qg Max Vgs

12nC @ 10V

Configuration

SINGLE WITH BUILT-IN DIODE

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Vgs Max

±30V

Seri

QFET®

Drain To Source Voltage Vdss

600V

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Vgsth Max Id

4V @ 250μA

Power Dissipation Max

2.5W Ta 44W Tc

Rds On Max Id Vgs

4.7 Ω @ 950mA, 10V

Ds Breakdown Voltagemin

600V

Tepe Reflow Sıcaklığı (°C)

260

Avalanche Energy Rating Eas

120 mJ

Jesd30 Code

R-PSSO-G2

Yüzey Montaj

YES

Pulsed Drain Currentmax Idm

7.6A

Terminal Formu

GULL WING

REACH Uyumluluk Kodu

not_compliant

Current Continuous Drain Id25

1.9A Tc

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

1.9A

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

235pF @ 25V

Transistor Application

SWITCHING

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

2

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

-55°C~150°C TJ