FQD2N60CTM

Teknik Özellikler

Vgs Max

±30V

Akım Değeri

1.9A

Seri

QFET®

Reach Svhc

No SVHC

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Power Dissipation

2.5W

Drain To Source Breakdown Voltage

600V

Vgsth Max Id

4V @ 250μA

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Gerilim

650V

Continuous Drain Current Id

1.9A

Gate Charge Qg Max Vgs

12nC @ 10V

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance Ciss Max Vds

235pF @ 25V

Current Continuous Drain Id25

1.9A Tc

Akım

18A

Number Of Elements

1

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

24 ns

Contact Plating

Tin

Radyasyon Dayanımı

No

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Uzunluk

6.73mm

Yükseklik

2.39mm

Kurşunsuz

Lead Free

Power Dissipation Max

2.5W Ta 44W Tc

Fet Type

N-Channel

Rise Time

25ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Element Configuration

Single

Genişlik

6.22mm

ECCN Kodu

EAR99

Turn On Delay Time

9 ns