FQD1N60CTM

Teknik Özellikler

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge Qg Max Vgs

6.2nC @ 10V

Additional Feature

AVALANCHE RATED

Continuous Drain Current Id

1A

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Seri

QFET®

Akım Değeri

1A

Weight

260.37mg

Vgs Max

±30V

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

600V

Yayın Yılı

2003

Vgsth Max Id

4V @ 250μA

Power Dissipation

2.5W

Turn Off Delay Time

13 ns

Gate To Source Voltage Vgs

30V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

1A Tc

Input Capacitance Ciss Max Vds

170pF @ 25V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Fabrika Tedarik Süresi

5 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Genişlik

6.1mm

Element Configuration

Single

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Rise Time

21ns

Kurşunsuz

Lead Free

Yükseklik

2.3mm

Uzunluk

6.6mm

Power Dissipation Max

2.5W Ta 28W Tc