FQD19N10TM

Teknik Özellikler

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Continuous Drain Current Id

15.6A

Gate Charge Qg Max Vgs

25nC @ 10V

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

100V

Yayın Yılı

2000

Vgsth Max Id

4V @ 250μA

Power Dissipation

2.5W

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Vgs Max

±25V

Weight

260.37mg

Akım Değeri

15.6A

Seri

QFET®

Reach Svhc

No SVHC

Turn Off Delay Time

20 ns

Contact Plating

Tin

Avalanche Energy Rating Eas

220 mJ

Gate To Source Voltage Vgs

25V

Number Of Elements

1

Current Continuous Drain Id25

15.6A Tc

Input Capacitance Ciss Max Vds

780pF @ 25V

ECCN Kodu

EAR99

Genişlik

6.1mm

Element Configuration

Single

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Rise Time

150ns

Fet Type

N-Channel

Kurşunsuz

Lead Free

Yükseklik

2.3mm

Uzunluk

6.6mm

Power Dissipation Max

2.5W Ta 50W Tc

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)