FQD17N08LTM

Teknik Özellikler

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Fall Time Typ

75 ns

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Jesd30 Code

R-PSSO-G2

Turn Off Delay Time

20 ns

Rds On Max Id Vgs

100m Ω @ 6.45A, 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Voltage Rated Dc

80V

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Transistor Application

SWITCHING

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

520pF @ 25V

Turn On Delay Time

7 ns

Current Continuous Drain Id25

12.9A Tc

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Continuous Drain Current Id

12.9A

Gate Charge Qg Max Vgs

11.5nC @ 5V

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Power Dissipation

2.5W

Power Dissipation Max

2.5W Ta 40W Tc

Kurşunsuz

Lead Free

Vgsth Max Id

2V @ 250μA

Drain To Source Breakdown Voltage

80V

Fet Type

N-Channel

Rise Time

290ns

Drive Voltage Max Rds On Min Rds On

5V 10V

Vgs Max

±20V