FQD13N06LTM

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

6.4nC @ 5V

Continuous Drain Current Id

11A

Kılıf / Paket

TO-252-3, DPak (2 Leads + Tab), SC-63

Reach Svhc

No SVHC

Akım Değeri

11A

Seri

QFET®

Vgs Max

±20V

Weight

260.37mg

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Power Dissipation

2.5W

Vgsth Max Id

2.5V @ 250μA

Drain To Source Breakdown Voltage

60V

Avalanche Energy Rating Eas

90 mJ

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

20 ns

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

350pF @ 25V

Current Continuous Drain Id25

11A Tc

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

8 Weeks

Genişlik

6.22mm

Element Configuration

Single

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

5V 10V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj

Surface Mount

Power Dissipation Max

2.5W Ta 28W Tc

Uzunluk

6.73mm

Yükseklik

2.39mm

Kurşunsuz

Lead Free

Fet Type

N-Channel

Rise Time

90ns

Jesd30 Code

R-PSSO-G2