FQB9N50CTM

Teknik Özellikler

Gate Charge Qg Max Vgs

35nC @ 10V

Continuous Drain Current Id

9A

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Power Dissipation

135W

Drain To Source Breakdown Voltage

500V

Yayın Yılı

2003

Vgsth Max Id

4V @ 250μA

Seri

QFET®

Akım Değeri

9A

Weight

1.31247g

Vgs Max

±30V

Reach Svhc

No SVHC

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

93 ns

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Input Capacitance Ciss Max Vds

1030pF @ 25V

Current Continuous Drain Id25

9A Tc

Element Configuration

Single

Genişlik

9.65mm

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

7 Weeks

Parça Durumu

Active

Uzunluk

10.67mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Power Dissipation Max

135W Tc

Rise Time

65ns

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Terminal Formu

GULL WING