FQB8N60CTM

Teknik Özellikler

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge Qg Max Vgs

36nC @ 10V

Continuous Drain Current Id

7.5A

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Seri

QFET®

Akım Değeri

8A

Weight

1.31247g

Vgs Max

±30V

Drain To Source Breakdown Voltage

600V

Yayın Yılı

2003

Vgsth Max Id

4V @ 250μA

Power Dissipation

3.13W

Contact Plating

Tin

Turn Off Delay Time

81 ns

Gate To Source Voltage Vgs

30V

Radyasyon Dayanımı

No

Current Continuous Drain Id25

7.5A Tc

Input Capacitance Ciss Max Vds

1255pF @ 25V

Number Of Elements

1

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

ECCN Kodu

EAR99

Element Configuration

Single

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Drive Voltage Max Rds On Min Rds On

10V

Fet Type

N-Channel

Rise Time

60.5ns

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Power Dissipation Max

3.13W Ta 147W Tc

Rds On Max Id Vgs

1.2 Ω @ 3.75A, 10V

Jesd30 Code

R-PSSO-G2

Pin Sayısı

3

Fall Time Typ

64.5 ns