FQB7P20TM

Teknik Özellikler

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

25nC @ 10V

Continuous Drain Current Id

7.3A

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Vgsth Max Id

5V @ 250μA

Drain To Source Breakdown Voltage

-200V

Yayın Yılı

2000

Power Dissipation

3.13W

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Drain To Source Voltage Vdss

200V

Akım Değeri

-7.3A

Seri

QFET®

Weight

1.31247g

Vgs Max

±30V

Radyasyon Dayanımı

No

Turn Off Delay Time

30 ns

Avalanche Energy Rating Eas

570 mJ

Gate To Source Voltage Vgs

30V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Current Continuous Drain Id25

7.3A Tc

Input Capacitance Ciss Max Vds

770pF @ 25V

ECCN Kodu

EAR99

Element Configuration

Single

Genişlik

9.65mm

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

110ns

Fet Type

P-Channel

Power Dissipation Max

3.13W Ta 90W Tc

Uzunluk

10.67mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V