FQB55N10TM

Teknik Özellikler

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

26m Ω @ 27.5A, 10V

Terminal Formu

GULL WING

Pulsed Drain Currentmax Idm

220A

Fall Time Typ

140 ns

Pin Sayısı

3

Case Connection

DRAIN

Direnç

26mOhm

Turn On Delay Time

25 ns

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~175°C TJ

Threshold Voltage

4V

Terminal Sayısı

2

Voltage Rated Dc

100V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

11 Weeks

Genişlik

9.65mm

Element Configuration

Single

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Montaj

Surface Mount

Power Dissipation Max

3.75W Ta 155W Tc

Uzunluk

6.35mm

Yükseklik

6.35mm

Kurşunsuz

Lead Free

Fet Type

N-Channel

Rise Time

250ns

Gate To Source Voltage Vgs

25V

Turn Off Delay Time

110 ns

Contact Plating

Tin

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

2730pF @ 25V

Current Continuous Drain Id25

55A Tc

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON