FQB50N06LTM

Teknik Özellikler

Power Dissipation

3.75W

Vgsth Max Id

2.5V @ 250μA

Yayın Yılı

2001

Drain To Source Breakdown Voltage

60V

Reach Svhc

No SVHC

Vgs Max

±20V

Weight

1.31247g

Akım Değeri

52.4A

Seri

QFET®

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Continuous Drain Current Id

52.4A

Gate Charge Qg Max Vgs

32nC @ 5V

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Number Of Elements

1

Input Capacitance Ciss Max Vds

1630pF @ 25V

Current Continuous Drain Id25

52.4A Tc

Drainsource On Resistancemax

0.025Ohm

Gate To Source Voltage Vgs

20V

Avalanche Energy Rating Eas

990 mJ

Turn Off Delay Time

80 ns

Contact Plating

Tin

Power Dissipation Max

3.75W Ta 121W Tc

Uzunluk

10.67mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Fet Type

N-Channel

Rise Time

380ns

Drive Voltage Max Rds On Min Rds On

5V 10V

Lifecycle Status

ACTIVE (Last Updated: 23 hours ago)

Montaj

Surface Mount

Genişlik

9.65mm

Element Configuration

Single

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED