FQB34P10TM

Teknik Özellikler

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

33.5mA

Gate Charge Qg Max Vgs

110nC @ 10V

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Weight

1.31247g

Vgs Max

±25V

Seri

QFET®

Akım Değeri

-34A

Reach Svhc

No SVHC

Drain To Source Voltage Vdss

100V

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Power Dissipation

3.75W

Yayın Yılı

2017

Drain To Source Breakdown Voltage

-100V

Nominal Vgs

4 V

Vgsth Max Id

4V @ 250μA

Avalanche Energy Rating Eas

2200 mJ

Gate To Source Voltage Vgs

25V

Turn Off Delay Time

160 ns

Radyasyon Dayanımı

No

Input Capacitance Ciss Max Vds

2910pF @ 25V

Current Continuous Drain Id25

33.5A Tc

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Element Configuration

Single

Genişlik

9.65mm

ECCN Kodu

EAR99

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 22 hours ago)

Yükseklik

4.83mm

Uzunluk

10.67mm

Kurşunsuz

Lead Free

Power Dissipation Max

3.75W Ta 155W Tc