FQB33N10TM

Teknik Özellikler

Number Of Elements

1

Input Capacitance Ciss Max Vds

1500pF @ 25V

Current Continuous Drain Id25

33A Tc

Gate To Source Voltage Vgs

25V

Contact Plating

Tin

Turn Off Delay Time

80 ns

Power Dissipation

3.75W

Yayın Yılı

2000

Drain To Source Breakdown Voltage

100V

Vgsth Max Id

4V @ 250μA

Seri

QFET®

Akım Değeri

33A

Vgs Max

±25V

Weight

1.31247g

Reach Svhc

No SVHC

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Gate Charge Qg Max Vgs

51nC @ 10V

Continuous Drain Current Id

33A

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status

Not Qualified

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

2

Threshold Voltage

4V

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Application

SWITCHING

Voltage Rated Dc

100V

Direnç

52MOhm

Turn On Delay Time

15 ns

Case Connection

DRAIN

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Terminal Formu

GULL WING

Pin Sayısı

3

Fall Time Typ

110 ns

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

52m Ω @ 16.5A, 10V