FQB25N33TM

Teknik Özellikler

Fall Time Typ

70 ns

Pulsed Drain Currentmax Idm

100A

Terminal Formu

GULL WING

Rds On Max Id Vgs

230m Ω @ 12.5A, 10V

Turn Off Delay Time

90 ns

Tepe Reflow Sıcaklığı (°C)

245

Avalanche Energy Rating Eas

370 mJ

Jesd30 Code

R-PSSO-G2

Gate To Source Voltage Vgs

30V

Transistor Application

SWITCHING

Voltage Rated Dc

330V

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

2

HTS Kodu

8541.29.00.95

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

25A Tc

Operating Mode

ENHANCEMENT MODE

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

2010pF @ 25V

ECCN Kodu

EAR99

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current Id

25A

Gate Charge Qg Max Vgs

75nC @ 15V

Ambalaj

Tape & Reel (TR)

Element Configuration

Single

Parça Durumu

Obsolete

Transistor Element Material

SILICON

Tepe Reflow Süresi (maks. sn)

30

Nem Hassasiyeti (MSL)

1 (Unlimited)

Qualification Status

Not Qualified

RoHS Durumu

RoHS Compliant

Drain To Source Breakdown Voltage

330V

Yayın Yılı

2006

Rise Time

100ns

Fet Type

N-Channel

Vgsth Max Id

5V @ 250μA

Kurşunsuz

Lead Free

Power Dissipation

3.1W

Power Dissipation Max

3.1W Ta 250W Tc