FQB19N20TM

Teknik Özellikler

Kurşunsuz

Lead Free

Power Dissipation Max

3.13W Ta 140W Tc

Rise Time

190ns

Fet Type

N-Channel

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Surface Mount

Lifecycle Status

ACTIVE (Last Updated: 16 hours ago)

Element Configuration

Single

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Terminal Sayısı

2

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Voltage Rated Dc

200V

Turn On Delay Time

20 ns

Direnç

150mOhm

Case Connection

DRAIN

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

Pin Sayısı

3

Fall Time Typ

80 ns

Pulsed Drain Currentmax Idm

78A

Jesd30 Code

R-PSSO-G2

Rds On Max Id Vgs

150m Ω @ 9.7A, 10V

Power Dissipation

3.13W

Drain To Source Breakdown Voltage

200V

Vgsth Max Id

5V @ 250μA

Weight

1.31247g

Vgs Max

±30V

Seri

QFET®

Akım Değeri

19.4A

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Continuous Drain Current Id

19.4A

Gate Charge Qg Max Vgs

40nC @ 10V

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB