FQB19N20CTM

Teknik Özellikler

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

53nC @ 10V

Continuous Drain Current Id

19A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Power Dissipation

3.13W

Vgsth Max Id

4V @ 250μA

Drain To Source Breakdown Voltage

200V

Yayın Yılı

2004

Akım Değeri

19A

Seri

QFET®

Weight

1.31247g

Vgs Max

±30V

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

135 ns

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Input Capacitance Ciss Max Vds

1080pF @ 25V

Current Continuous Drain Id25

19A Tc

Genişlik

9.65mm

Element Configuration

Single

ECCN Kodu

EAR99

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Fabrika Tedarik Süresi

5 Weeks

Power Dissipation Max

3.13W Ta 139W Tc

Uzunluk

10.67mm

Yükseklik

4.83mm

Kurşunsuz

Lead Free

Fet Type

N-Channel

Rise Time

150ns

Drive Voltage Max Rds On Min Rds On

10V

Lifecycle Status

ACTIVE (Last Updated: 16 hours ago)

Montaj

Surface Mount

Terminal Formu

GULL WING

Fall Time Typ

115 ns