FQB11N40CTM

Teknik Özellikler

Vgsth Max Id

4V @ 250μA

Rise Time

89ns

Fet Type

N-Channel

Drain To Source Breakdown Voltage

400V

Power Dissipation Max

135W Tc

Power Dissipation

135W

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 14 hours ago)

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Drive Voltage Max Rds On Min Rds On

10V

Akım Değeri

10.5A

Seri

QFET®

Vgs Max

±30V

Weight

1.31247g

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Kodu

EAR99

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

35nC @ 10V

Additional Feature

FAST SWITCHING

Continuous Drain Current Id

10.5A

Parça Durumu

Active

Fabrika Tedarik Süresi

8 Weeks

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Number Of Elements

1

Voltage Rated Dc

400V

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

10.5A Tc

Kurşunsuz Kodu

yes

Input Capacitance Ciss Max Vds

1090pF @ 25V

Case Connection

DRAIN

Turn On Delay Time

14 ns

Fall Time Typ

81 ns

Pulsed Drain Currentmax Idm

42A