FQB10N50CFTM-WS

Teknik Özellikler

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

500V

Seri

FRFET®, QFET™

Weight

1.31247g

Vgs Max

±30V

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Montaj

Surface Mount

Montaj Tipi

Surface Mount

Power Dissipation Max

143W Tc

Power Dissipation

143W

Vgsth Max Id

4V @ 250μA

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Element Configuration

Single

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

60nC @ 10V

Continuous Drain Current Id

10A

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance Ciss Max Vds

2210pF @ 25V

Case Connection

DRAIN

Operating Mode

ENHANCEMENT MODE

Current Continuous Drain Id25

10A Tc

Kurşunsuz Kodu

yes

REACH Uyumluluk Kodu

not_compliant

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

2

Number Of Elements

1

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

825 mJ

Gate To Source Voltage Vgs

30V

Jesd30 Code

R-PSSO-G2

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Ds Breakdown Voltagemin

500V

Rds On Max Id Vgs

610m Ω @ 5A, 10V

Terminal Formu

GULL WING