FQA9N90-F109

Teknik Özellikler

Rds On Max Id Vgs

1.3 Ω @ 4.3A, 10V

Turn Off Delay Time

135 ns

Avalanche Energy Rating Eas

900 mJ

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Fall Time Typ

80 ns

Radyasyon Dayanımı

No

Current Continuous Drain Id25

8.6A Tc

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

45 ns

Input Capacitance Ciss Max Vds

2700pF @ 25V

Transistor Application

SWITCHING

Number Of Elements

1

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-3P-3, SC-65-3

Continuous Drain Current Id

8.6A

Gate Charge Qg Max Vgs

72nC @ 10V

Ambalaj

Tube

Element Configuration

Single

Montaj

Through Hole

Montaj Tipi

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Weight

6.401g

Vgs Max

±30V

Seri

QFET®

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

900V

Fet Type

N-Channel

Rise Time

100ns

Vgsth Max Id

5V @ 250μA

Power Dissipation

240W

Power Dissipation Max

240W Tc