FQA90N15

Teknik Özellikler

Drain To Source Breakdown Voltage

150V

Vgsth Max Id

4V @ 250μA

Power Dissipation

375W

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Vgs Max

±25V

Weight

6.401g

Akım Değeri

90A

Seri

QFET®

Reach Svhc

No SVHC

Kılıf / Paket

TO-3P-3, SC-65-3

Continuous Drain Current Id

90A

Gate Charge Qg Max Vgs

285nC @ 10V

Ambalaj

Tube

Transistor Element Material

SILICON

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Current Continuous Drain Id25

90A Tc

Input Capacitance Ciss Max Vds

8700pF @ 25V

Turn Off Delay Time

470 ns

Contact Plating

Tin

Gate To Source Voltage Vgs

25V

Fet Type

N-Channel

Rise Time

760ns

Uzunluk

15.8mm

Yükseklik

18.9mm

Kurşunsuz

Lead Free

Power Dissipation Max

375W Tc

Montaj

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 10 hours ago)

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Genişlik

5mm

Element Configuration

Single

Fabrika Tedarik Süresi

10 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING