FQA8N90C-F109

Teknik Özellikler

Input Capacitance Ciss Max Vds

2080pF @ 25V

Turn On Delay Time

40 ns

Drain Currentmax Abs Id

8A

Current Continuous Drain Id25

8A Tc

Kurşunsuz Kodu

yes

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

3

Number Of Elements

1

Terminal Kaplaması

MATTE TIN

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

30V

Avalanche Energy Rating Eas

850 mJ

Turn Off Delay Time

70 ns

Rds On Max Id Vgs

1.9 Ω @ 4A, 10V

Radyasyon Dayanımı

No

Fall Time Typ

70 ns

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±30V

Weight

6.401g

Seri

QFET®

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Montaj

Through Hole

Power Dissipation

240W

Power Dissipation Max

240W Tc

Vgsth Max Id

5V @ 250μA

Drain To Source Breakdown Voltage

900V

Rise Time

110ns

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Ambalaj

Tube

Element Configuration

Single

Continuous Drain Current Id

8A