FQA8N100C

Teknik Özellikler

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Input Capacitance Ciss Max Vds

3220pF @ 25V

Current Continuous Drain Id25

8A Tc

Gate To Source Voltage Vgs

30V

Avalanche Energy Rating Eas

850 mJ

Turn Off Delay Time

122 ns

Power Dissipation

225W

Yayın Yılı

2005

Drain To Source Breakdown Voltage

1kV

Vgsth Max Id

5V @ 250μA

Akım Değeri

8A

Seri

QFET®

Weight

6.401g

Vgs Max

±30V

Drain To Source Voltage Vdss

1000V

Reach Svhc

No SVHC

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

70nC @ 10V

Additional Feature

FAST SWITCHING

Continuous Drain Current Id

8A

Ambalaj

Tube

Kılıf / Paket

TO-3P-3, SC-65-3

Qualification Status

Not Qualified

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

3

Threshold Voltage

5V

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Voltage Rated Dc

1kV

Drain Currentmax Abs Id

8A

Direnç

1.45Ohm

Turn On Delay Time

50 ns

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Pin Sayısı

3

Fall Time Typ

80 ns

Rds On Max Id Vgs

1.45 Ω @ 4A, 10V