FQA6N90C-F109

Teknik Özellikler

Kılıf / Paket

TO-3P-3, SC-65-3

Continuous Drain Current Id

6A

Gate Charge Qg Max Vgs

40nC @ 10V

Ambalaj

Tube

Transistor Element Material

SILICON

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Drain To Source Breakdown Voltage

900V

Yayın Yılı

2007

Vgsth Max Id

5V @ 250μA

Power Dissipation

198W

Montaj Tipi

Through Hole

Vgs Max

±30V

Weight

6.401g

Seri

QFET®

Reach Svhc

No SVHC

Turn Off Delay Time

55 ns

Avalanche Energy Rating Eas

650 mJ

Gate To Source Voltage Vgs

30V

Number Of Elements

1

Current Continuous Drain Id25

6A Tc

Input Capacitance Ciss Max Vds

1770pF @ 25V

Genişlik

5mm

Element Configuration

Single

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fet Type

N-Channel

Rise Time

90ns

Uzunluk

15.8mm

Yükseklik

18.9mm

Power Dissipation Max

198W Tc

Montaj

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 18 hours ago)

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Pulsed Drain Currentmax Idm

24A

Fall Time Typ

60 ns

Rds On Max Id Vgs

2.3 Ω @ 3A, 10V