FQA46N15

Teknik Özellikler

Yayın Yılı

2005

Drain To Source Breakdown Voltage

150V

Vgsth Max Id

4V @ 250μA

Power Dissipation

250W

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Seri

QFET®

Akım Değeri

50A

Weight

6.401g

Vgs Max

±25V

Reach Svhc

No SVHC

Kılıf / Paket

TO-3P-3, SC-65-3

Gate Charge Qg Max Vgs

110nC @ 10V

Continuous Drain Current Id

50A

Additional Feature

FAST SWITCHING

Ambalaj

Tube

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Current Continuous Drain Id25

50A Tc

Input Capacitance Ciss Max Vds

3250pF @ 25V

Radyasyon Dayanımı

No

Contact Plating

Tin

Turn Off Delay Time

210 ns

Avalanche Energy Rating Eas

650 mJ

Gate To Source Voltage Vgs

25V

Fet Type

N-Channel

Rise Time

320ns

Kurşunsuz

Lead Free

Yükseklik

20.1mm

Uzunluk

15.8mm

Power Dissipation Max

250W Tc

Montaj

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 2 hours ago)

Drive Voltage Max Rds On Min Rds On

10V

ECCN Kodu

EAR99

Element Configuration

Single

Genişlik

5mm

Fabrika Tedarik Süresi

5 Weeks

Parça Durumu

Active