FQA44N30

Teknik Özellikler

Current Continuous Drain Id25

43.5A Tc

Input Capacitance Ciss Max Vds

5600pF @ 25V

Terminal Kaplaması

Tin (Sn)

Number Of Elements

1

Turn Off Delay Time

240 ns

Avalanche Energy Rating Eas

1700 mJ

Gate To Source Voltage Vgs

30V

Drainsource On Resistancemax

0.069Ohm

Radyasyon Dayanımı

No

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Akım Değeri

43.5A

Seri

QFET®

Vgs Max

±30V

Weight

6.401g

Yayın Yılı

2013

Drain To Source Breakdown Voltage

300V

Vgsth Max Id

5V @ 250μA

Power Dissipation

310W

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Kılıf / Paket

TO-3P-3, SC-65-3

Gate Charge Qg Max Vgs

150nC @ 10V

Continuous Drain Current Id

43.5A

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes

Turn On Delay Time

85 ns

Transistor Application

SWITCHING

Voltage Rated Dc

300V

Terminal Sayısı

3

Çalışma Sıcaklığı

-55°C~150°C TJ

HTS Kodu

8541.29.00.95

Rds On Max Id Vgs

69m Ω @ 21.75A, 10V

Pin Sayısı

3

Fall Time Typ

230 ns

Pulsed Drain Currentmax Idm

174A

Montaj

Through Hole

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)

Drive Voltage Max Rds On Min Rds On

10V