FQA38N30

Teknik Özellikler

Weight

6.401g

Vgs Max

±30V

Seri

QFET®

Akım Değeri

38.4A

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Power Dissipation

290W

Yayın Yılı

2000

Drain To Source Breakdown Voltage

300V

Vgsth Max Id

5V @ 250μA

Transistor Element Material

SILICON

Qualification Status

Not Qualified

RoHS Durumu

RoHS Compliant

Continuous Drain Current Id

38.4A

Gate Charge Qg Max Vgs

120nC @ 10V

Ambalaj

Tube

Kılıf / Paket

TO-3P-3, SC-65-3

Input Capacitance Ciss Max Vds

4400pF @ 25V

Current Continuous Drain Id25

38.4A Tc

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Gate To Source Voltage Vgs

30V

Turn Off Delay Time

170 ns

Drainsource On Resistancemax

0.085Ohm

Drive Voltage Max Rds On Min Rds On

10V

Montaj

Through Hole

Lifecycle Status

ACTIVE, NOT REC (Last Updated: 1 week ago)

Uzunluk

15.8mm

Yükseklik

18.9mm

Kurşunsuz

Lead Free

Power Dissipation Max

290W Tc

Rise Time

430ns

Fet Type

N-Channel

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

4 Weeks

Parça Durumu

Obsolete

Element Configuration

Single

Genişlik

5mm

ECCN Kodu

EAR99