FQA36P15

Teknik Özellikler

Kılıf / Paket

TO-3P-3, SC-65-3

Ambalaj

Tube

Continuous Drain Current Id

-36A

Additional Feature

FAST SWITCHING

Gate Charge Qg Max Vgs

105nC @ 10V

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Vgsth Max Id

4V @ 250μA

Drain To Source Breakdown Voltage

-150V

Yayın Yılı

2013

Power Dissipation

294W

JESD-609 Kodu

e3

Montaj Tipi

Through Hole

Drain To Source Voltage Vdss

150V

Reach Svhc

No SVHC

Weight

6.401g

Vgs Max

±30V

Seri

QFET®

Akım Değeri

-36A

Turn Off Delay Time

155 ns

Gate To Source Voltage Vgs

30V

Number Of Elements

1

Terminal Kaplaması

Tin (Sn)

Current Continuous Drain Id25

36A Tc

Input Capacitance Ciss Max Vds

3320pF @ 25V

ECCN Kodu

EAR99

Element Configuration

Single

Genişlik

5mm

Parça Durumu

Active

Fabrika Tedarik Süresi

4 Weeks

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Type

P-Channel

Rise Time

350ns

Power Dissipation Max

294W Tc

Uzunluk

15.8mm

Yükseklik

18.9mm

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 1 week ago)