Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 28.4A Tc
- Input Capacitance Ciss Max Vds
- 5600pF @ 25V
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 250 ns
- Contact Plating
- Tin
- Gate To Source Voltage Vgs
- 30V
- Nominal Vgs
- 5 V
- Vgsth Max Id
- 5V @ 250μA
- Yayın Yılı
- 2000
- Drain To Source Breakdown Voltage
- 500V
- Power Dissipation
- 310W
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Reach Svhc
- No SVHC
- Vgs Max
- ±30V
- Weight
- 6.401g
- Akım Değeri
- 28.4A
- Seri
- QFET®
- Kılıf / Paket
- TO-3P-3, SC-65-3
- Dual Supply Voltage
- 500V
- Ambalaj
- Tube
- Continuous Drain Current Id
- 28.4A
- Gate Charge Qg Max Vgs
- 140nC @ 10V
- RoHS Durumu
- RoHS Compliant
- Transistor Element Material
- SILICON
- Voltage Rated Dc
- 500V
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Terminal Sayısı
- 3
- Kurşunsuz Kodu
- yes
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 100 ns
- Fall Time Typ
- 175 ns
- Pin Sayısı
- 3
- Rds On Max Id Vgs
- 160m Ω @ 14.2A, 10V
- Fet Type
- N-Channel
- Rise Time
- 290ns
- Power Dissipation Max
- 310W Tc
- Uzunluk
- 15.8mm
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